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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The IXTP3N120 is a high voltage N-channel enhancement-mode Power MOSFET features avalanche rated and rated for unclamped inductive load switching (UIS).
High dV/dt
International standard package
Low RDS (ON)
UL94V-0 Flammability rating
Easy to mount
Space savings
High power density

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IXTP3N120 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.20 kV
Current Rating	3.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	4.5 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	1.2 kV
Continuous Drain Current (Ids)	3.00 A
Rise Time	35 ns
Reverse recovery time	700 ns
Input Capacitance (Ciss)	1350pF @25V(Vds)
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
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The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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- Electrical testing
- Surface testing
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