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LM5113QDPRRQ1 - TI
Manufacturer:
TI
ManyChip's Part#:
MC13008328
Package:
WSON-10
Datasheet:
Datasheet 3D Model
Description:
Automotive, 100V 1.2A / 5A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40℃ to 125℃
Stock Locations:
Availability:
324 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 10.11

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

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LM5113QDPRRQ1 Specifications

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SN:H1.30409LO76018V43Q0QC0S1

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