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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
High density cell design for extremely low RDS (ON)
High power and current handling capability
±20V Gate-source voltage

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NDT456P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Power Dissipation	3 W
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	30 V
Rise Time	65 ns
Input Capacitance (Ciss)	1440pF @15V(Vds)
Input Power (Max)	1.1 W
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3 W
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
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