NGTB40N120FL2WG ON Semiconductor - IGBT Transistor, IGBT Module

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NGTB40N120FL2WG - ON Semiconductor
Manufacturer:
ON Semiconductor
ManyChip's Part#:
MC3916596
Category:
IGBT Transistor, IGBT Module
Package:
TO-247-3
Datasheet:
Datasheet 3D Model
Description:
Транзистор IGBT, N-канал, 1200 В, 80 А, 652000 мВт, 3 вывода (3+таб), TO-247, в трубке
Stock Locations:
Availability:
66 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 11.36

Updated at 16/09/2026 10:30:15(UTC+8)

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Description

Вам не придется беспокоиться о задержках в вашей схеме с этим IGBT-транзистором NGTB40N120FL2WG от ON Semiconductor. Максимальное напряжение коллектор-эмиттер составляет 1200 В. Максимальная рассеиваемая мощность — 652000 мВт. Данное изделие поставляется в рейковой упаковке, чтобы отдельные компоненты были разделены и защищены. Этот прибор изготовлен по технологии field stop II|trench. Данный IGBT-транзистор имеет минимальную рабочую температуру −55 °C и максимальную 175 °C. Он выполнен в одиночной конфигурации.

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	535 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	240 ns
Rating Power (Max)	535 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	535 W
	Show
Size-Length	16.25 mm
Size-Width	5.3 mm
Size-Height	21.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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