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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This NTD12N10T4G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1760 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

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NTD12N10T4G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	12.0 A
Drain to Source Resistance (on) (Rds)	165 mΩ
Polarity	N-Channel
Power Dissipation	1.76 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	30 ns
Input Capacitance (Ciss)	550pF @25V(Vds)
Input Power (Max)	1.28 W
Fall Time	32 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.28W (Ta), 56.6W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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charges, duties and taxes.
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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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- Decapsulation control
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- Electrical testing
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SN:H2.30251LO36517V35Q0QC0S1

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