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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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NTD2955 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Case/Package	TO-252-3
Voltage Rating (DC)	-60.0 V
Current Rating	-12.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	155 mΩ
Polarity	P-Channel
Power Dissipation	55 W
Threshold Voltage	4 V
Input Capacitance	750 pF
Gate Charge	30.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	45 ns
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

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