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Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

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Description

The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
PNP complement is PBHV9115Z
V8115Z Marking code

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PBHV8115Z Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	700 mW
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	1A
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
	Show
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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