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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
**Key Features**
Very tight variation of on-resistance vs. temperature
Slight variation of switching losses vs. temperature
Very high operating temperature capability (200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Easy to drive

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SCT20N120 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	215 mΩ
Power Dissipation	175 W
Threshold Voltage	2 V
Input Capacitance	650 pF
Drain to Source Voltage (Vds)	1200 V
Breakdown Voltage (Drain to Source)	1.2 kV
Rise Time	16 ns
Input Capacitance (Ciss)	650pF @400V(Vds)
Fall Time	17 ns
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	175W (Tc)
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Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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