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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The SPA06N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for server, telecom, PC Power and adapter applications.
New revolutionary high voltage technology
Extreme dV/dt rated
High peak current capability
Qualified according to JEDEC for target applications
Ultra low effective capacitance
Fully isolated package
Low specific ON-state resistance
Field proven CoolMOS™ quality
Very low energy storage in output capacitance (Eoss)@400V
High efficiency and power density
Outstanding performance
High reliability
Ease of use

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SPA06N60C3 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	650 V
Current Rating	6.20 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.68 Ω
Polarity	N-Channel
Power Dissipation	32 W
Threshold Voltage	3 V
Input Capacitance	620 pF
Gate Charge	31.0 nC
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	6.20 A
Rise Time	12 ns
Input Capacitance (Ciss)	620pF @25V(Vds)
Input Power (Max)	32 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	32W (Tc)
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Size-Length	10.65 mm
Size-Width	4.85 mm
Size-Height	16.15 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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