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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

This fast-switching STGF7NB60SL IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 25000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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STGF7NB60SL Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	25 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	25 W
Rise Time	250 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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