STGWT60H65DFB ST Microelectronics - IGBT Transistor, IGBT Module

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STGWT60H65DFB - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC40891371
Category:
IGBT Transistor, IGBT Module
Package:
TO-3-3
Datasheet:
Datasheet 3D Model
Description:
Транзистор IGBT чип N-CH 650В 80А 375000мВт 3Выв(3+Таб) TO-3P трубка
Stock Locations:
Availability:
3 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 2.17

Updated at 16/09/2026 10:30:15(UTC+8)

Certifications

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Description

Этот мощный и надежный IGBT-транзистор STGWT60H65DFB от компании STMicroelectronics обеспечит правильную работу вашей схемы. Его максимальная рассеиваемая мощность составляет 375000 мВт. Максимальное напряжение коллектор-эмиттер равно 650 В. Чтобы предотвратить повреждение компонентов при массовой упаковке, данное изделие поставляется в трубчатой упаковке, обеспечивающей дополнительную защиту за счет хранения отдельных деталей во внешней трубке. Этот IGBT-транзистор имеет диапазон рабочих температур от -40 °C до 175 °C. Он выполнен в одиночной конфигурации.

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	375000 mW
Input Capacitance	7792 pF
Breakdown Voltage (Collector to Emitter)	650 V
Thermal Resistance	50 ℃/W
Reverse recovery time	60 ns
Rating Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	375 W
	Show
Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

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