STGYA120M65DF2AG ST Microelectronics -

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STGYA120M65DF2AG - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC101450809
Package:
TO-247-3
Datasheet:
Datasheet 3D Model
Description:
Транзистор IGBT N-канальный, 650 В, 160 А, 625000 мВт, автомобильный, 3 вывода (3+Tab), корпус Max247, в трубке
Stock Locations:
Availability:
528 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 4.29

Updated at 16/09/2026 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

IGBT траншейный с полевым стопом, 650 В, 160 А, 625 Вт, для монтажа в отверстия, корпус MAX247™

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	625 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	202 ns
Rating Power (Max)	625 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625000 mW
	Show
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

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