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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The STP160N75F3 is a STripFET™ II N-channel enhancement-mode Power MOSFET suitable for switching applications. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
Ultra-low ON-resistance
100% Avalanche tested
-55 to 175°C Operating junction temperature range

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STP160N75F3 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.5 mΩ
Polarity	N-Channel
Power Dissipation	330 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	75 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	65 ns
Input Capacitance (Ciss)	6750pF @25V(Vds)
Input Power (Max)	330 W
Fall Time	15 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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The terms here are for reference only, the actual terms are subject to the sales quotation.
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