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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The STP85N3LH5 is a N-channel Power MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. The lowest available RDS (ON)Qg, in the standard packages, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
RDS (ON) x Qg industry benchmark
Extremely low ON-resistance RDS (ON)
High avalanche ruggedness
Low gate drive power losses

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STP85N3LH5 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0046 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	40.0 A
Rise Time	14 ns
Input Capacitance (Ciss)	1850pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	10.8 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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