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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Insulated package: TO-220AC Ins
Insulated voltage: 2500 VRMS sine
Typical package capacitance: 7 pF

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STPSC10H065DI Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Number of Positions	2 Position
Forward Voltage	1.75V @10A
Forward Current	10000 mA
Max Forward Surge Current (Ifsm)	90 A
Maximum Forward Voltage (Max)	1.75 V
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
	Show
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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