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Updated at 31/10/2025 10:30:15(UTC+8)

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Description

Use this versatile NPN 2N2484 GP BJT from Microsemi to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.

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2N2484 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-18
Power Dissipation	0.36 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	225 @10mA, 5V
Input Power (Max)	360 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	360 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status
ECCN Code	EAR99

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