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STPSC10TH13TI - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC45836330
Category:
Schottky Diode
Package:
TO-220-3
Datasheet:
Datasheet 3D Model
Description:
STMICROELECTRONICS STPSC10TH13TI Silicon Carbide Schottky Diode, SIC, 650V Series, Dual Series, 650V, 10A, 28.5NC, TO-220AB
Stock Locations:
Availability:
572 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 7.63

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Suited for specific bridge-less topologies
High forward surge capability
Insulated package:
Capacitance: 7 pF
Insulated voltage: 2500 V rms

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STPSC10TH13TI Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Forward Voltage	1.75V @10A
Reverse recovery time	0 ns
Forward Current	10 A
Max Forward Surge Current (Ifsm)	470 A
Maximum Forward Voltage (Max)	1.75V @10A
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature	150℃ (Max)
Junction Temperature (Max)	175 ℃
	Show
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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