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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
**Key Features**
No reverse recovery charge in application current range
Switching behavior independent of temperature
Dedicated to PFC applications
ECOPACK® 2 compliant component

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STPSC40065CW Specifications

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charges, duties and taxes.
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- Please confirm with the logistics company in advance for remote areas.
(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
- A tracking number will be sent after your order ships.
- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
- MOQ refers to the minimum order quantity required to purchase each part.
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- Inspection (PSI) will be performed prior to shipment.
- Income Quality Control (IQC), 1000+ qualified dealers.
- Chips are tested by authoritative organizations to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray control
- XRF inspection
- Electrical testing
- Surface testing
-Digital components warehouse, covering an area of 800 square meters, with constant temperature and humidity

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SN:H1.51199LO17303V38Q0QC0S0

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