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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
**Key Features**
No reverse recovery charge in application current range
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Insulated package TO-220AC Ins:
Insulated voltage: 2500 V rms
Typical package capacitance: 7 pF

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STPSC6H065DI Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.75V @6A
Forward Current	6000 mA
Max Forward Surge Current (Ifsm)	400 A
Forward Current (Max)	6 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.9 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

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