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Updated at 03/11/2025 10:30:15(UTC+8)

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Description

Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment

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TIP142T Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	10.0 A
Polarity	NPN
Power Dissipation	90 W
Breakdown Voltage (Collector to Base)	100 V
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	500
Input Power (Max)	80 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	90000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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