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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This transistor features UL94V-0 rated case and solderable as per MIL-STD-202, method 208 matte tin finish lead frame (lead free plating) terminals. This MOSFET is suitable for general purpose applications. it is complementary to ZVP3310F type transistor.
High pulse current handling in linear mode
Low input capacitance
Fast switching speed

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ZVN3310F Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	10 Ω
Power Dissipation	330 mW
Threshold Voltage	2.4 V
Drain to Source Voltage (Vds)	100 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Obsolete
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2014/12/17

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