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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The 1N5819G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverter and freewheeling diodes.
Cathode indicated by polarity band
Extremely low forward voltage
Low stored charge and majority carrier conduction
Low power loss and high efficiency
48V Non-repetitive peak reverse voltage
28V RMS reverse voltage
80°C/W Junction-to-ambient thermal resistance
ESD sensitive device, take proper precaution while handling the device.

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1N5819G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-204AL
Voltage Rating (DC)	40.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Output Current	≤1.00 A
Number of Positions	2 Position
Forward Voltage	600mV @1A
Polarity	Standard
Thermal Resistance	80℃/W (RθJA)
Max Breakdown Voltage	40 V
Forward Current	1 A
Max Forward Surge Current (Ifsm)	25 A
Maximum Forward Voltage (Max)	600 mV
Forward Current (Max)	1 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature (Max)	125 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	5.2 mm
Size-Width	2.7 mm
Size-Height	5.2 mm
Operating Temperature	-65℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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