RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 3Pin
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-72 |
| Polarity | N-Channel |
| Power Dissipation | 300 mW |
| Drain to Source Voltage (Vds) | 35 V |
| Breakdown Voltage (Drain to Source) | 35 V |
| Breakdown Voltage (Gate to Source) | 35 V |
| Continuous Drain Current (Ids) | 15.0 mA |
| Reverse Breakdown Voltage | 35 V |
| Input Capacitance (Ciss) | 4pF @15V(Vds) |
| Input Power (Max) | 300 mW |
| Power Dissipation (Max) | 300 mW |
| Show | |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |