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Updated at 01/11/2025 10:30:15(UTC+8)
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Description
- As an alternative to traditional transistors, the APT10M07JVFR power MOSFET from Microsemi can be used to both amplify and switch electronic signals. Its maximum power dissipation is 700000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes power mos v technology. This N channel MOSFET transistor operates in enhancement mode.
APT10M07JVFR Specifications
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227 |
| Voltage Rating (DC) | 100 V |
| Current Rating | 225 A |
| Power Dissipation | 700 W |
| Input Capacitance | 21.6 nF |
| Gate Charge | 1.05 µC |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 225 A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 18000pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700000 mW |
| Show | |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
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