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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This fast-switching APT200GN60JDQ4 IGBT transistor from Microsemi will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single dual emitter configuration.

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APT200GN60JDQ4 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227
Power Dissipation	682000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	14.1nF @25V
Input Power (Max)	682 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	682000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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