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Updated at 04/12/2025 10:30:15(UTC+8)

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Description

Feature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1= 22kΩ , R2= 22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

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BCR191 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Case/Package	SOT-323-3
Polarity	PNP
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
Reverse recovery time	4 ns
Maximum Forward Voltage (Max)	1.25V @150mA
Junction Temperature	150℃ (Max)
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Product Lifecycle Status	End of Life
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant

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