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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The BFR 360F H6327 is a NPN Silicon RF Transistor for low-noise amplifier for low current applications. The device is suitable for amplifier and oscillator applications in RF front-end. The collector design of the device supports 5V supply voltage.
Low noise figure

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BFR360FH6327XTSA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	PG-TSFP-3
Frequency	14000 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	210 mW
Input Capacitance	0.4 pF
Breakdown Voltage (Collector to Emitter)	9 V
Gain	15.5 dB
hFE Min	90 @15mA, 3V
Input Power (Max)	210 mW
DC Current Gain (hFE)	90
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	210 mW
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Size-Length	1.2 mm
Size-Width	0.8 mm
Size-Height	0.55 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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