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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The BPV11 is a clear Silicon NPN Phototransistor with high radiant sensitivity and base terminal. It is sensitive to visible and near infrared radiation. It has high photo and radiant sensitivity and a base terminal is connected.
Fast response times
±15° Angle of half sensitivity

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BPV11 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	T-1
Current Rating	50.0 mA
Rise/Fall Time	6 ns
Number of Channels	1 Channel
Number of Positions	2 Position
Wavelength	850 nm
Viewing Angle	15°
Peak Wavelength	850 nm
Polarity	NPN
Power Dissipation	150 mW
Power Consumption	150 mW
Rise Time	6 µs
Breakdown Voltage (Collector to Emitter)	70.0 V
Fall Time	5 µs
Operating Temperature (Max)	100 ℃
Power Dissipation (Max)	150 mW
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Size-Length	5.75 mm
Size-Width	5.75 mm
Size-Height	8 mm
Material	Silicon
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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