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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The BPW96C is a Silicon NPN Phototransistor with high radiant sensitivity in clear plastic package. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
Leaded package
Leads with stand-off
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response time
ϕ = ±20° Angle of half sensitivity

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BPW96C Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	T-1
Current Rating	50.0 mA
Power Rating	0.15 W
Rise/Fall Time	2.3 ns
Number of Channels	1 Channel
Number of Positions	2 Position
Wavelength	850 nm
Viewing Angle	20°
Peak Wavelength	850 nm
Polarity	NPN
Power Dissipation	0.15 W
Power Consumption	150 mW
Rise Time	2 µs
Breakdown Voltage (Collector to Emitter)	70.0 V
Fall Time	2.3 µs
Operating Temperature (Max)	100 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	150 mW
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Size-Length	5.75 mm
Size-Width	5.75 mm
Size-Height	8.6 mm
Material	Silicon
Operating Temperature	-40℃ ~ 100℃
Packaging	Bulk
RoHS	RoHS Compliant
ECCN Code	EAR99

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
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The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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