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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
High density cell design for extremely low RDS (ON)

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BSS138W Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-323
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.17 Ω
Power Dissipation	0.34 W
Threshold Voltage	1.3 V
Drain to Source Voltage (Vds)	50 V
Rise Time	1.9 ns
Input Capacitance (Ciss)	38pF @25V(Vds)
Input Power (Max)	340 mW
Fall Time	6.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	340 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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