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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Texas Instruments brings you their latest NPN DS2003TM Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array"s maximum emitter base voltage is 6 V. This product"s maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 55 V and a maximum emitter base voltage of 6 V. This Darlington transistor array has an operating temperature range of -40 °C to 125 °C.

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DS2003TM Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	5.00 V, 5.00 V (max)
Number of Outputs	7 Output
Output Voltage	50 V
Output Current	500 mA
Number of Circuits	1 Circuit
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	55 V
Drivers Per Package	7
Continuous Collector Current	0.5A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	5 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

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SN:H1.49172LO19099V32Q0QC0S0

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