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Updated at 26/10/2025 10:30:15(UTC+8)

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Description

The FDD8896 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
High performance Trench technology for extremely low RDS (ON)
Low gate charge
High power and current handling capability

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FDD8896 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	30.0 V
Current Rating	94.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0047 Ω
Polarity	N-Channel
Power Dissipation	80 W
Threshold Voltage	2.5 V
Input Capacitance	2.52 nF
Gate Charge	46.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	94.0 A
Rise Time	106 ns
Input Capacitance (Ciss)	2525pF @15V(Vds)
Input Power (Max)	80 W
Fall Time	41 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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