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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.

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FDG312P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	-20.0 V
Current Rating	-1.20 A
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.135 Ω
Polarity	P-Channel
Power Dissipation	750 mW
Threshold Voltage	900 mV
Input Capacitance	330 pF
Gate Charge	3.30 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	-200 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	1.20 A
Rise Time	12 ns
Input Capacitance (Ciss)	330pF @10V(Vds)
Input Power (Max)	480 mW
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	750mW (Ta)
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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