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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The FDN352AP is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
High performance trench technology for extremely low RDS (on)

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FDN352AP Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Power Dissipation	0.5 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	30 V
Rise Time	15 ns
Input Capacitance (Ciss)	150pF @15V(Vds)
Input Power (Max)	460 mW
Fall Time	1 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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