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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

N-Channel, Logic Level, PowerTrench General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor"s PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS(on) .• High power version of industry standard SOT-23package. Identical pin out to SOT-23 with 30% higher power handling capability.

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FDN361AN Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Case/Package	SOT-23-3
Voltage Rating (DC)	30.0 V
Current Rating	1.80 A
Drain to Source Resistance (on) (Rds)	72.0 mΩ
Polarity	N-Channel
Power Dissipation	500mW (Ta)
Input Capacitance	220 pF
Gate Charge	2.10 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.80 A
Rise Time	11.0 ns
Input Capacitance (Ciss)	220pF @15V(Vds)
Input Power (Max)	460 mW
Power Dissipation (Max)	500mW (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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