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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FDPF16N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
100% Avalanche tested
32nC Typical low gate charge
20pF Typical low Crss

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FDPF16N50 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	380 mΩ
Polarity	N-Channel
Power Dissipation	38.5 W
Threshold Voltage	5 V
Input Capacitance	1.94 nF
Gate Charge	45.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	16.0 A
Rise Time	150 ns
Input Capacitance (Ciss)	1945pF @25V(Vds)
Input Power (Max)	38.5 W
Fall Time	80 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	38.5 W
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Size-Length	10.16 mm
Size-Width	4.7 mm
Size-Height	15.87 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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