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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

General Description
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Features
• 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V
RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (27nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
Applications
• DC/DC converter
• Low side notebook

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FDS6670AS Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	13.5 A
Drain to Source Resistance (on) (Rds)	9.00 mΩ
Polarity	N-Channel
Power Dissipation	2.5W (Ta)
Input Capacitance	1.54 nF
Gate Charge	27.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	13.5 A
Rise Time	5 ns
Input Capacitance (Ciss)	1540pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	18 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
	Show
Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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