IGBT-транзистор, N-канальный, 1250 В, 40 А, 250000 мВт, корпус 3-выводной (3+Tab) TO-3PN, лента

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 250000 mW |
| Breakdown Voltage (Collector to Emitter) | 1250 V |
| Rating Power (Max) | 250 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| Show | |
| Size-Height | 18.9 mm |
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |