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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
Low gate charge (typical 6.3nC)
Low Crss (typical 18pF)
100% Avalanche tested
±30V Gate to source voltage
62.5°C/W Thermal resistance, junction to ambient

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FQT5P10TF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	820 mΩ
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Rise Time	70 ns
Input Capacitance (Ciss)	190pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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The terms here are for reference only, the actual terms are subject to the sales quotation.
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SN:H2.46151LO11611V33Q0QC0S0

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