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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Product Details
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.
The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.
The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.
Applications
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
### Features and Benefits
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad (MINI_SO_EP)

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HMC349AMS8GETR Specifications

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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