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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

Product Details
The HMC907A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 41 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.7 dB from DC to 12 GHz making the HMC907A ideal for EW, ECM, Radar and test equipment applications. The HMC907A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
**Applications**
Test Instrumentation
Military & Space
### Features and Benefits
High P1dB Output Power: +28 dBm
High Gain: 14 dB
High Output IP3: +41 dBm
Single Supply: +10V @ 350 mA
50 Ohm Matched Input/Output
Die Size: 2.92 x 1.35 x 0.1 mm

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HMC907A Specifications

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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- Decapsulation control
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- Electrical testing
- Surface testing
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