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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

Description:
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features:
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Benefits:
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time

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IPB033N10N5LFATMA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0027 Ω
Power Dissipation	179 W
Threshold Voltage	3.3 V
Drain to Source Voltage (Vds)	100 V
Rise Time	32 ns
Input Capacitance (Ciss)	350pF @50V(Vds)
Fall Time	48 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	179000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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- Income Quality Control (IQC), 1000+ qualified dealers.
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- Decapsulation control
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- Electrical testing
- Surface testing
-Digital components warehouse, covering an area of 800 square meters, with constant temperature and humidity

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SN:H1.03347LO12237V45Q0QC0S0

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