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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Description:
The new OptiMOS™ 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance (R DS(on)) and figure of merit (FOM), but also provide high system reliability through the lowest reverse recovery charge (Q rr) available on the market. With the new 300V OptiMOS™ series, Infineon brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies (UPS), industrial power supplies, DC-AC inverters and motor control.
Summary of Features:
Fast diode technology
Industry best R DS(on) with more than 58% lower FOM
Hard commutation ruggedness
Optimized hard switching behavior
Benefits:
Highest efficiency and power density
Board space and system cost reduction
High system reliability
Best switching performance
Easy-to-design products

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IPP410N30N Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Case/Package	TO-220
Polarity	N-CH
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	44A
	Show
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS-conform
Lead-Free Status	Lead Free
ECCN Code	EAR99

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