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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRF840ALPBF is a HEXFET® N-channel Power MOSFET offers low gate charge Qg results in simple drive requirement. It is suitable for high speed power switching.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance, avalanche voltage and current

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IRF840ALPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-262-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.85 Ω
Polarity	N-Channel
Power Dissipation	3.1 W
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	8.00 A
Rise Time	23 ns
Input Capacitance (Ciss)	1018pF @25V(Vds)
Input Power (Max)	3.1 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Packaging	Tube
Minimum Packing Quantity	1000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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