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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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IRFB3607PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.00734 Ω
Polarity	N-CH
Power Dissipation	140 W
Threshold Voltage	4 V
Input Capacitance	3070 pF
Drain to Source Voltage (Vds)	75 V
Continuous Drain Current (Ids)	80A
Rise Time	110 ns
Input Capacitance (Ciss)	3070pF @50V(Vds)
Input Power (Max)	140 W
Fall Time	96 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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