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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRFL014NPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Low static drain-to-source ON-resistance

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IRFL014NPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.16 Ω
Polarity	N-Channel
Power Dissipation	1 W
Threshold Voltage	4 V
Input Capacitance	190 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	2.7A
Rise Time	7.1 ns
Input Capacitance (Ciss)	190pF @25V(Vds)
Fall Time	3.3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not For New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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