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Updated at 31/10/2025 10:30:15(UTC+8)

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Description

The IRFR7540TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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IRFR7540TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.004 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	3.7 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	110A
Rise Time	38 ns
Input Capacitance (Ciss)	4360pF @25V(Vds)
Fall Time	32 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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