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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
Advanced process technology
Ultra-low ON-resistance
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Logic level

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IRLL024NTRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.065 Ω
Polarity	N-CH
Power Dissipation	1 W
Threshold Voltage	2 V
Input Capacitance	510 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	4.4A
Rise Time	21 ns
Input Capacitance (Ciss)	510pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.739 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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