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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage (Vds) of 20V
Gate to source voltage of ±12V
On resistance Rds(on) of 35mohm at Vgs 4.5V
Power dissipation Pd of 1.25W at 25°C
Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
Operating junction temperature range from -55°C to 150°C

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IRLML2502PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.045 Ω
Polarity	N-CH
Power Dissipation	1.25 W
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	4.2A
Input Capacitance (Ciss)	740pF @15V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.25 W
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Size-Length	3.04 mm
Size-Width	1.4 mm
Size-Height	1.02 mm
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

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