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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The IRLML6302PBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
Generation V technology
Low profile (<1.1mm)
Fast switching
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fully avalanche rating
Halogen-free

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IRLML6302PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Power Rating	0.54 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.6 Ω
Polarity	P-CH
Power Dissipation	400 mW
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	0.78A
Input Capacitance (Ciss)	97pF @15V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	540 mW
	Show
Size-Length	3.05 mm
Size-Width	1.4 mm
Size-Height	1.01 mm
Product Lifecycle Status	Active
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

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